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PD - 97187
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRGI4065PBF
Key Parameters
300 1.25 170 150 V V A C
VCE min VCE(ON) typ. @ IC = 28A IRP max @ TC= 25C TJ max
C
G E
E C G
n-channel
G Gate C Collector
TO-220AB Full-Pak
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25C IC @ TC = 100C IRP @ TC = 25C PD @TC = 25C PD @TC = 100C TJ TSTG Gate-to-Emitter Voltage Continuous Collector Current, VGE @ 15V Continuous Collector, VGE @ 15V Repetitive Peak Current c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature for 10 seconds Mounting Torque, 6-32 or M3 Screw 300 10lbxin (1.1Nxm) N
Max.
30 28 14 170 39 16 0.31 -40 to + 150
Units
V A
W W/C C
Thermal Resistance
Parameter
RJC Junction-to-Case d
Typ.
---
Max.
3.20
Units
C/W
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IRGI4065PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVCES V(BR)ECS VCES/TJ Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltagee Breakdown Voltage Temp. Coefficient
Min.
300 18 --- --- ---
Typ. Max. Units
--- --- 0.23 1.05 1.25 1.75 2.25 2.75 --- -12 2.0 50 --- --- 26 62 20 --- 875 975 2200 110 55 5.0 13 --- --- --- --- 1.45 --- --- --- 5.0 --- 25 --- 100 -100 --- --- --- --- --- --- --- --- --- --- nH --- pF ns J S nC nA V V mV/C A V
Conditions
VGE = 0V, ICE = 1 mA
VGE = 0V, ICE = 1 A V V/C Reference to 25C, ICE = 1mA VGE = 15V, ICE = 15A e V VGE = 15V, ICE = 28A e V V VGE = 15V, ICE = 70A e VGE = 15V, ICE = 110A e VGE = 15V, ICE = 110A, TJ = 150C e VCE = VGE, ICE = 0.5mA VCE = 300V, VGE = 0V VCE = 300V, VGE = 0V, TJ = 150C VGE = 30V VGE = -30V VCE = 25V, ICE = 25A VCE = 200V, IC = 25A, VGE = 15Ve VCC = 240V, VGE = 15V, RG= 5.1 L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 25C L = 220nH, C= 0.40F, VGE = 15V VCC = 240V, RG= 5.1, TJ = 100C VGE = 0V VCE = 30V = 1.0MHz, Between lead, 6mm (0.25in.) from package and center of die contact See Fig.13
VCE(on)
Static Collector-to-Emitter Voltage
--- --- ---
VGE(th) VGE(th)/TJ ICES IGES gfe Qg Qgc tst EPULSE
Gate Threshold Voltage Gate Threshold Voltage Coefficient Collector-to-Emitter Leakage Current Gate-to-Emitter Forward Leakage Gate-to-Emitter Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Collector Charge Shoot Through Blocking Time Energy per Pulse
2.6 --- --- --- --- --- --- --- --- 100 --- ---
Ciss Coss Crss LC LE
Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Collector Inductance Internal Emitter Inductance
--- --- --- --- ---
Notes: Half sine wave with duty cycle = 0.10, ton=2sec. R is measured at TJ of approximately 90C. Pulse width 400s; duty cycle 2%.
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IRGI4065PBF
280
TOP
280
V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
TOP
240 200
ICE (A)
BOTTOM
240 200
ICE (A)
BOTTOM
V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V)
160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V)
Fig 1. Typical Output Characteristics @ 25C
280
TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
Fig 2. Typical Output Characteristics @ 75C
360
TOP V = 18V GE V = 15V GE V = 12V GE V = 10V GE V = 8.0V GE V = 6.0V GE
240 200
ICE (A)
BOTTOM
320 280 240
ICE (A)
BOTTOM
160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V)
200 160 120 80 40 0 0 2 4 6 8 10 12 14 16 VCE (V)
Fig 3. Typical Output Characteristics @ 125C
600
ICE, Collector-to-Emitter Current (A)
Fig 4. Typical Output Characteristics @ 150C
20
IC = 25A
500
15
400 300 200 T J = 25C T J = 125C
VCE (V)
10
T J = 25C T J = 150C
5
100 0 0 5 10 15 20 VGE, Gate-to-Emitter Voltage (V)
0 0 5 10 VGE (V) 15 20
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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IRGI4065PBF
30 25 20 15 10 5 0 0 25 50 75 100 125 150
180 160
Repetitive Peak Current (A)
IC, Collector Current (A)
140 120 100 80 60 40 20 0 25 50 75
ton= 2s Duty cycle <= 0.10 Half Sine Wave
100
125
150
Fig 7. Maximum Collector Current vs. Case Temperature
1000 V CC = 240V 900
Energy per Pulse (J)
T C, Case Temperature (C)
Case Temperature (C)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1000 L = 220nH C = 0.4F 100C
L = 220nH C = variable
900
Energy per Pulse (J)
100C
800 700 600 500 400 300 200
800 700 600 500 400 160 170 180 190 200 210 220 230 25C
25C
150 160 170 180 190 200 210 220 230 240 VCE, Collector-to-Emitter Voltage (V)
IC, Peak Collector Current (A)
Fig 9. Typical EPULSE vs. Collector Current
1400 V CC = 240V 1200
Energy per Pulse (J)
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1000
L = 220nH t = 1s half sine
C= 0.4F
OPERATION IN THIS AREA LIMITED BY V CE(on) 100
1000 800 600 C= 0.2F 400 200 25 50 75 100 125 150 TJ, Temperature (C)
C= 0.3F
IC (A)
10sec 100sec
10
1 1 10 VCE (V) 100 1000
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
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IRGI4065PBF
100000
VGE, Gate-to-Emitter Voltage (V)
VGS = 0V, f = 1 MHZ C ies = C ge + C gd , C ce SHORTED Cres = C gc Coes = Cce + Cgc
25 IC = 25A 20 VCE = 240V VCE = 200V VCE = 150V
10000
Capacitance (pF)
Cies 1000
15
10
100
Coes Cres
5
10 0 50 100 150 200 250 300 VCE, Collector-toEmitter-Voltage(V)
0 0 10 20 30 40 50 60 70 80 Q G, Total Gate Charge (nC)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10 D = 0.50 0.20 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
Thermal Response ( Z thJC )
1
0.1
Ri (C/W) i (sec) 0.533 0.000938 1.163 1.504 0.140118 2.477
0.01 SINGLE PULSE ( THERMAL RESPONSE )
1
2
Ci= i/Ri Ci i/Ri
0.001
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 1 10 100
0.0001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGI4065PBF
A
RG
DRIVER L
C
PULSE A
VCC
B
PULSE B
RG
Ipulse DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy IC Current
0
L DUT 1K VCC
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
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IRGI4065PBF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
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TO-220AB Full-Pak package is not recommended for Surface Mount Application. The specifications set forth in this data sheet are the sole and exclusive specifications applicable to the identified product, and no specifications or features are implied whether by industry custom, sampling or otherwise. We qualify our products in accordance with our internal practices and procedures, which by their nature do not include qualification to all possible or even all widely used applications. Without limitation, we have not qualified our product for medical use or applications involving hi-reliability applications. Customers are encouraged to and responsible for qualifying product to their own use and their own application environments, especially where particular features are critical to operational performance or safety. Please contact your IR representative if you have specific design or use requirements or for further information.
Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.02/06
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